功率电子用陶瓷封装

更新时间:2015-03-27

Copper plates and silicon nitride ceramic substrates are bonded by active metal bonding method. Upper layer circuits are connected to lower ones by buried copper vias.High reliability: Hermeticity confirmed after 1000 cycles (-65oC to +150oC) of temperature cycling test.

      

Figure 1) Cross Section:                                                        (Figure 2) Cross Section:
0.9mm-Diameter Buried Copper                                         Multilayer Structure of Copper-Bonded
Via                                                                                              Silicon Nitride Packages

Features
(1)High reliability: Hermeticity confirmed after 1000 cycles of -65oC to +150oC temperature cycling test .
(2)0.15 to 0.3mm-thick copper (volume resistivity: 1.7μ •cm; thermal conductivity: 394W/mK)
(3)Silicon nitride ceramics (flexural strength: 850MPa; fracture toughness: 5.0MPam1/2; thermal conductivity: 58W/mK)
(4)Multilayer structure: Copper plates and silicon nitride ceramic substrates are bonded by active metal bonding (AMB) method (Figure 2)
(5)Three-dimensional multilayer wiring structure: Upper layer circuits and lower layer circuits are connected by buried copper vias (Figure 1)
Low inductance can be made by multilayer structure
(6)Size and weight reduction
(7)Screw clamping possible

Copper-Bonded Silicon Nitride Substrates

Silicon nitride ceramic substrate: High strength (flexural strength: 850MPa)Copper plates and silicon nitride ceramic substrates are bonded by active metal bonding method.High reliability: Insulation resistance and dielectric withstand voltage confirmed after 5000 cycles (-60oC to +175oC) of temperature cycling test (sample: five pieces; Kyocera test results.